A10678 - RCP111D Silicon NPN Transistor
Features:
High Collector-Emitter Breakdown Voltage Voltage: V(BR)CER = 300V @ IC = 1mA
Low Collector-Base Capacitance: Ccb = 3pF Max @ VCB = 20V
TO-202 package.
A10678
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Product Information
Shipping & Returns
Shipping & Returns

A10678 - RCP111D Silicon NPN Transistor
A10678 - RCP111D Silicon NPN Transistor
Features:
High Collector-Emitter Breakdown Voltage Voltage: V(BR)CER = 300V @ IC = 1mA
Low Collector-Base Capacitance: Ccb = 3pF Max @ VCB = 20V
TO-202 package.
A10678
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
Features:
High Collector-Emitter Breakdown Voltage Voltage: V(BR)CER = 300V @ IC = 1mA
Low Collector-Base Capacitance: Ccb = 3pF Max @ VCB = 20V
TO-202 package.
A10678











